LPE Growth of Ga 1 –  x  In  x  Sb Multi‐grading Layers | Zendy

Xiuying Gong | Zendy; Okitsu Kazuhiko | Zendy; Ozawa Tetsuo | Zendy; Hawakawa Yasuhiro | Zendy; Yamaguchi Tomou | Zendy; Kumagawa Masashi | Zendy

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LPE Growth of Ga 1 – x In x Sb Multi‐grading Layers

Author(s) -

Xiuying Gong,

Okitsu Kazuhiko,

Ozawa Tetsuo,

Hawakawa Yasuhiro,

Yamaguchi Tomou,

Kumagawa Masashi

Publication year - 1992

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170270507

Subject(s) - electronegativity , lattice constant , epitaxy , materials science , lattice (music) , analytical chemistry (journal) , band gap , crystallography , chemistry , optics , physics , nanotechnology , optoelectronics , diffraction , layer (electronics) , organic chemistry , chromatography , acoustics

Electronegativity difference approach (ENDA) has been successfully employed to obtain good prediction of the In atomic fraction, energy bandgap and lattice constant of the Ga 1 – x In x Sb/Ga 1 – y In y Sb/GaSb system. Nearly lattice‐matched GalnSb epilayers with In atomic fraction of 0.42 have been obtained by the liquid phase epitaxy. The cut‐off wavelength was 2.2 μm at room temperature.

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