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LPE Growth of Ga 1 – x In x Sb Multi‐grading Layers
Author(s) -
Xiuying Gong,
Okitsu Kazuhiko,
Ozawa Tetsuo,
Hawakawa Yasuhiro,
Yamaguchi Tomou,
Kumagawa Masashi
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270507
Subject(s) - electronegativity , lattice constant , epitaxy , materials science , lattice (music) , analytical chemistry (journal) , band gap , crystallography , chemistry , optics , physics , nanotechnology , optoelectronics , diffraction , layer (electronics) , organic chemistry , chromatography , acoustics
Abstract Electronegativity difference approach (ENDA) has been successfully employed to obtain good prediction of the In atomic fraction, energy bandgap and lattice constant of the Ga 1 – x In x Sb/Ga 1 – y In y Sb/GaSb system. Nearly lattice‐matched GalnSb epilayers with In atomic fraction of 0.42 have been obtained by the liquid phase epitaxy. The cut‐off wavelength was 2.2 μm at room temperature.