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Material Characterization of Chemically Deposited Photoconducting CdS Films
Author(s) -
Bhushan S.,
Sharma S. K.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270424
Subject(s) - impurity , materials science , hexagonal crystal system , characterization (materials science) , doping , band gap , absorption (acoustics) , rare earth , absorption spectroscopy , analytical chemistry (journal) , attenuation coefficient , crystallography , chemistry , nanotechnology , optics , optoelectronics , metallurgy , physics , organic chemistry , chromatography , composite material
Results of SEM, XRD and absorption measurements were obtained to characterize the chemically deposited undoped and rare earth doped CdS films. SEM studies present the crystalline nature of undoped CdS. In Presence of NaF layered growth takes place which finally results in cabbage type growth. In presence of rare earths cabbage and crystalline growth are observed. XRD studies of undoped CdS show combination of cubic as well as hexagonal phases. Presence of impurities results in change in itensity of peaks along with appearance of some new peaks. The absorption coefficient studies show a band gap of 2.41 eV for undoped CdS.