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Modelling of Thermal Conditions in GaAs Crystal Growth by the Gradient Freezing Technique (I) Fundamentals
Author(s) -
Hein K.,
Buhrig E.,
Göhler H.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270311
Subject(s) - extrapolation , temperature gradient , crystallization , process (computing) , thermal , crystal growth , crystal (programming language) , materials science , temperature control , chemical physics , process control , biological system , thermodynamics , mechanics , chemistry , computer science , crystallography , physics , mathematics , meteorology , mathematical analysis , programming language , operating system , biology
In the gradient freezing process crystal growth is fully controlled by influencing the thermal conditions. The method described in this publication combines measurements with Si phantoms with their modelling by calculation and the extrapolation of the material properties to GaAs. Results show that the gradients in time and space and the crystallization rate are interrelated and influenced by technological and design factors. For process control in the gradient freezing process, accurate knowledge of the differences between the time‐temperature programs given by the automatic control system and the actual thermal regime in the crystal is required.