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Stress, Strain, and Symmetry of Pseudomorphically Grown Epitaxial Layers
Author(s) -
Tempel A.,
Mäder M.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270218
Subject(s) - epitaxy , strain (injury) , symmetry (geometry) , materials science , stress (linguistics) , crystallography , condensed matter physics , composite material , chemistry , geometry , physics , mathematics , anatomy , layer (electronics) , biology , linguistics , philosophy
The complete stress and strain tensors and the point symmetry of pseudomorphically grown epitaxial layers are calculated from the epitaxial relationship and the elastic constants of the deposit material. The angle misalignment of crystallographic directions in the deposit due to the strain is also calculated and results are given for the epitaxial systems CaF 2 /Si(100) and CaF 2 /Si(111).