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High Spatial Resolution Raman Investigations: of Grown‐in Dislocations in Si‐doped GaAs
Author(s) -
Pätzold O.,
Irmer G.,
Monecke J.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270126
Subject(s) - physics