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A Semiclosed Technique of Zinc Diffusion in InP
Author(s) -
Krieghoff T.,
Nowak E.,
Kühn G.,
Schumann B.,
Höpner A.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270108
Subject(s) - zinc , wafer , diffusion , layer (electronics) , chemistry , thin layer , analytical chemistry (journal) , metal , diffusion layer , materials science , optoelectronics , chromatography , thermodynamics , physics , organic chemistry
A novel semiclosed diffusion technique for InP has been developed. As diffusion source an InP wafer evaporated with a thin layer of metallic zinc was used. The source is separated at a distance of 150 μm from the sample. The dependence of the zinc concentration and the free‐hole concentration on the thickness of the zinc layer and the time was investigated. The technique makes it possible to obtain free‐hole concentration of (8 ± 2) · 10 18 cm −3 .