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Morphology and Microstructure of TiN and Ti(N, C) Thin Layers
Author(s) -
Wokulski Z.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260811
Subject(s) - tin , crystallite , microstructure , materials science , thin film , graphite , morphology (biology) , crystallography , crystal (programming language) , single crystal , mineralogy , metallurgy , nanotechnology , chemistry , genetics , computer science , biology , programming language
Thin layers of TiN and Ti(N, C) solid solution were obtained by the CVD process, making use of the following gas mixtures: TiCl 4 –N 2 –H 2 for TiN and TiCl 4 –CCl 4 –N 2 –H 2 for Ti(N, C). The thin layers deposition processes were carried out in the temperature range from 900–1450 °C. As growth substrates were used polycrystalline Al 2 O 3 , graphite, W, Mo and Cu plates and also single crystal Al 2 O 3 (leucosapphire), (111) Cu and (111) Si plates. The influence of certain technological factors on the morphology of the layers obtained was studied. TEM examinations were also made of the microstructure of the thin TiN layers and the Ti(N, C) solid solution layers deposited on polycrystalline and single crystal Cu plates. Factors responsible for the presence of a high density of dislocations in the tested films were ascertained.