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Microinhomogeneities of Charge Carrier Concentration in GaAs
Author(s) -
Kallenowsky T.,
Koi H.,
Boudriot H.,
Oettel O.,
Schneider H. A.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260805
Subject(s) - charge carrier , charge (physics) , materials science , base (topology) , crystal (programming language) , absorption (acoustics) , optoelectronics , analytical chemistry (journal) , chemical physics , condensed matter physics , chemistry , physics , computer science , composite material , environmental chemistry , mathematics , quantum mechanics , mathematical analysis , programming language
The tendency towards higher and higher integration of electronic components leads to increased requirements to the quality of the base material. The main requirement is homoneity of sturctural and related electronic and optoelectronic crystal properties of the base material within microscopic (and still decreasing) areas, in correspondence with the specific application. This paper is to present investigations of the correlation between local fluctuations of the charge carrier concentration and the occurrence of growth‐related striations in terms of IR absorption.