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Rapid Thermal Diffusion of Zinc in GaAs
Author(s) -
Nowak E.,
Kühn G.,
Morgenstern T.,
Schumann B.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260804
Subject(s) - zinc , diffusion , thermal , materials science , halogen lamp , analytical chemistry (journal) , semiconductor , halogen , chemistry , mineralogy , metallurgy , optoelectronics , thermodynamics , optics , physics , organic chemistry , alkyl , chromatography
Rapid thermal diffusion of zinc into semi‐insulating GaAs from spin‐on silica films was investigated for various temperatures and heating rates with halogen lamps as the heat source. Dependent on the heating rate two types of SIMS profiles were observed. The degree of electrical activation of zinc was different as measured by the Hall effect. In some cases at high zinc concentrations, a ZnGa 2 O 4 film on the GaAs surface was formed.