Premium
Melt Growth of CdTe Crystals and Transmission Electron Microscopic Investigations of their Grain Boundaries
Author(s) -
Sabinina I. V.,
Gutakovski A. K.,
Milenov T. I.,
Lyakh N. N.,
Sidorov Y. O.,
Gospodinov M. M.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260802
Subject(s) - misorientation , grain boundary , materials science , cadmium telluride photovoltaics , transmission electron microscopy , crystallography , melting point , stoichiometry , quartz , condensed matter physics , mineralogy , composite material , chemistry , optoelectronics , nanotechnology , microstructure , physics , organic chemistry
Transmission electron microscopy investigations are carried out on CdTe crystals grown in quartz ampoules in a temperature region (1020–1091 °C) near to the melting point of 1092 °C, by travelling heater method in quasi‐closed and in sealed (at 0.135 Pa) volume, and by the Bridgman method from nearly stoichiometric melts. An original method for preparation of CdTe thin foil is reported. Two types of grain boundaries are observed: high‐angle misoriented grain boundaries (more than ten degrees misorientation between adjacent grains) and low‐angle misoriented grain boundaries (less than one degree misorientation between adjacent sub‐grain). Both dislocations with Burgers vector b = a /6 〈112〉 and b = a /2 〈110〉 are present.