Premium
Saturation Behaviour of In – Ga – As Melts and Growth of In .53 Ga .47 As Lattice‐matched to (001) InP Substrates
Author(s) -
Gottschalch V.,
Knobloch G.,
Butter E.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260605
Subject(s) - saturation (graph theory) , monocrystalline silicon , materials science , lattice (music) , analytical chemistry (journal) , mineralogy , thermodynamics , chemistry , metallurgy , silicon , chromatography , physics , mathematics , combinatorics , acoustics
Abstract This paper presents the saturation behaviour of In – Ga – As melts with monocrystalline GaAs. The coulometric As‐analysis confirmed that the source‐seed‐technique produces In – Ga – As melts of defined compositions. The growth results of the step cooling technique applying both the source‐seed technique and the single phase melts are compared.