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Horizontal Bridgman Growth of GaAs Doped with Isovalent Impurity
Author(s) -
Moravec F.,
Stepanek B.,
Doubrava P.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260509
Subject(s) - impurity , doping , materials science , isotropic etching , crystal growth , etching (microfabrication) , crystal (programming language) , single crystal , semiconductor materials , crystallography , optoelectronics , condensed matter physics , optics , semiconductor , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , computer science , programming language
Single crystals of GaAs doped with In and N were grown by the horizontal Bridgman method. The influence of isovalent doping on the crystal growth was investigated. The single crystals were examined by means of the chemical etching of dislocations, electrical measurements and optical measurements.