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RHEED Investigations on Low‐temperature Thermal SiO 2 Films
Author(s) -
Popova L. I.,
Peneva S. K.,
Tcukeva E. A.,
Atanassova E. D.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260410
Subject(s) - crystallinity , amorphous solid , materials science , tube furnace , chlorine , tube (container) , reflection high energy electron diffraction , thermal , mineralogy , chemical engineering , crystallography , chemistry , composite material , epitaxy , metallurgy , thermodynamics , layer (electronics) , engineering , physics
The structural changes in thermal SiO 2 films grown at 1123–1173 K in a double walled furnace tube with chlorine between the inner and the outer tube are studied. The layers have a higher degree of crystallinity in comparison with the layers grown by standard high temperature dry oxidation (1273 K). A difference between the crystalline type structures of SiO 2 films on p‐ and n‐Si is observed. The increase of the growth temperature from 1123 to 1273 K increases the variety of crystalline structures in the layers but decreases strongly their quantity and makes the films predominantly amorphous.