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Studies of Growth Mechanism and Sulfur Incorporation in VPE of GaAs under Nearly Equilibrium Conditions
Author(s) -
Tempelhoff K.,
Schmidt P. M.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260402
Subject(s) - sulfur , chlorine , desorption , growth rate , chemistry , deposition (geology) , crystal growth , inorganic chemistry , crystallography , adsorption , geology , organic chemistry , paleontology , geometry , mathematics , sediment
Detailed investigations of growth rate of GaAs VPE‐layers and sulfur incorporation during crystal growth have been carried out under nearly equilibrium conditions at low temperatures (680 °C). The present investigation examines the dependence of growth rate and sulfur incorporation on the initial partial pressures (p°) of GaCl and HCl in the deposition zone. The observed deviation from the 1:1 proportion between GaCl before and HCl after the growth reaction will be discussed in a model of chlorine desorption by GaCl 3 . The sulfur concentration dependence in the grown layer indicates an identic growth mechanism and supports the idea of sulfur incorporation through an activated complex on the GaAs surface.