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Characterization of the Microhardness of Ion‐implanted GaP
Author(s) -
Ascheron C.,
Neumann H.,
Kühn G.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260305
Subject(s) - indentation hardness , materials science , ion , hardening (computing) , ion implantation , characterization (materials science) , crystallography , hydrogen , crystallographic defect , analytical chemistry (journal) , mineralogy , composite material , nanotechnology , chemistry , microstructure , layer (electronics) , chromatography , organic chemistry
Implantation induced changes of the microhardness are studied in GaP single crystals which were bombarded with ions in the range of mass numbers M = 1–40. It is observed that point defects and incorporated hydrogen have a stronger hardening effect. The effect of defect complexes is lower, and amorphized layers are softer than crystalline layers.