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MOVPE of InP Using Trimethylindium – Trimethylamine Adduct
Author(s) -
Keller B. P.,
Oelgart G.,
Pickenhain R.,
Grummt G.,
Seifert W.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260302
Subject(s) - trimethylindium , trimethylamine , metalorganic vapour phase epitaxy , photoluminescence , chemistry , substrate (aquarium) , luminescence , analytical chemistry (journal) , zinc , single crystal , materials science , optoelectronics , epitaxy , crystallography , organic chemistry , layer (electronics) , oceanography , geology
Growth of InP layers by MOVPE using trimethylindium‐trimethylamine (TMIn–TMN) is described. Low temperature photoluminescence results reveal the high crystal quality indicated by the well resolved excitonic spectra and high internal quantum efficiency. A strong near‐gap luminescence degradation with decreasing substrate temperature during the growth corresponds with the increasing deep level concentration estimated by the DLTS‐investigations. In the specimens prepared at higher temperatures carbon and zinc are believed to be the main residual acceptors. From C–V data free carrier concentrations of 10 15 cm −3 were obtained.