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Influence of Profile Parameters on the IR Thickness Measurement of Thin Silicon Epitaxial Layers
Author(s) -
Quick Ch.,
Hild E.,
Schley P.,
Quick J.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260217
Subject(s) - epitaxy , silicon , substrate (aquarium) , materials science , layer (electronics) , infrared , optoelectronics , reflectivity , thin film , optics , mineralogy , chemistry , composite material , nanotechnology , geology , physics , oceanography
For IR thickness measurements of very thin silicon epitaxial layers ( d epi < 3 μm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxial layer systems are analysed by mathematical simulations. The theoretical results are confirmed by experimental ones.