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RHEED Studies of MBE‐grown Aluminium Layers on {111}‐Oriented Silicon Substrates
Author(s) -
Büschel M.,
Tempel A.,
Zehe A.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260215
Subject(s) - reflection high energy electron diffraction , epitaxy , silicon , aluminium , substrate (aquarium) , materials science , thin film , crystallography , evaporation , mineralogy , chemical engineering , optoelectronics , chemistry , nanotechnology , composite material , geology , layer (electronics) , physics , oceanography , thermodynamics , engineering
Thin Al‐layers were prepared by Knudsen‐type evaporation of Al onto {111} Si in a custom built UHV‐reactor. Epitaxial growth was found on clean substrate surfaces with (7 × 7) reconstruction. In situ RHEED provides the epitaxial relationshipThe epitaxial films show a twelve‐fold symmetry axis according to the combination of the 4‐fold and 3‐fold symmetry of the {001} deposit plane and of the substrate surface, respectively.
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