RHEED Studies during Surface Cleaning of Silicon for MBE Substrates | Zendy

Dominguez F. | Zendy; Tempel A. | Zendy; Zehe A. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

RHEED Studies during Surface Cleaning of Silicon for MBE Substrates

Author(s) -

Dominguez F.,

Tempel A.,

Zehe A.

Publication year - 1991

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170260214

Subject(s) - wafer , annealing (glass) , silicon , reflection high energy electron diffraction , materials science , surface reconstruction , analytical chemistry (journal) , nanotechnology , optoelectronics , metallurgy , chemistry , epitaxy , surface (topology) , environmental chemistry , geometry , mathematics , layer (electronics)

Silicon wafers were prepared for MBE growth by chemical treatment and temperature annealing under UHV conditions. The (7 × 7) and (2 × 1) reconstruction of {111} and {100}‐oriented Si surfaces were obtained only after high temperature annealing for few minutes at 1200 °C. The reconstruction effects were found to be stable for a long time even if the pressure in the UHV chamber increased to 10 −5 Pa.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research