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RHEED Studies during Surface Cleaning of Silicon for MBE Substrates
Author(s) -
Dominguez F.,
Tempel A.,
Zehe A.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260214
Subject(s) - wafer , annealing (glass) , silicon , reflection high energy electron diffraction , materials science , surface reconstruction , analytical chemistry (journal) , nanotechnology , optoelectronics , metallurgy , chemistry , epitaxy , surface (topology) , environmental chemistry , geometry , mathematics , layer (electronics)
Silicon wafers were prepared for MBE growth by chemical treatment and temperature annealing under UHV conditions. The (7 × 7) and (2 × 1) reconstruction of {111} and {100}‐oriented Si surfaces were obtained only after high temperature annealing for few minutes at 1200 °C. The reconstruction effects were found to be stable for a long time even if the pressure in the UHV chamber increased to 10 −5 Pa.