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Determination of P, B, and Al Concentrations in Si by Photoluminescence (PL)
Author(s) -
Schramm G.,
Herzog R.,
Kessler H.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260121
Subject(s) - photoluminescence , luminescence , dopant , analytical chemistry (journal) , intensity (physics) , exciton , calibration curve , phonon , calibration , silicon , materials science , chemistry , doping , optics , physics , condensed matter physics , optoelectronics , detection limit , chromatography , quantum mechanics
Abstract Calibration curves to determine P, B, and Al concentrations in silicon at 4.2 K from the intensity ratios of bound (BE) and free (FE) exciton related luminescence are presented. The integral relative intensities of the peaks are used besides the peak height ratios. By means of a large number of samples with widely varying concentrations it is shown that the influence of the compensation ratios of the samples on the determination of the dopant concentrations is smaller than the measurement errors. Integral intensity ratios of different BE phonon branches are also derived.