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TEM Studies of Er + – implanted CdTe
Author(s) -
Morawiec J.,
Gołacki Z.
Publication year - 1991
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170260110
Subject(s) - ion implantation , transmission electron microscopy , cadmium telluride photovoltaics , materials science , annealing (glass) , radiation damage , dislocation , crystallography , planar , ion , stacking , molecular physics , chemistry , optoelectronics , radiation , composite material , optics , nanotechnology , physics , computer graphics (images) , organic chemistry , computer science
The structure and the depth distribution of radiation damage caused by erbium implantation ( E i = 100 keV, D = 5 × 10 15 cm −2 , T i = LNT) in 〈111〉 cadmium telluride have been investigated by means of planar‐view and cross‐sectional TEM techniques. It is found that the implantation disturbes the CdTe target up to the depth well‐beyond the calculated projected range (that is ≳ × 5 R p ). The resulting damage structure consists of well‐defined defects: precipitates, stacking faults, dislocation loops, and dislocation networks, which appear to be segregated with depth forming a sequence of homogeneously faulted zones. This characteristical and deep damage is suggested to be formed on dynamic annealing in response to internal stresses (caused by lattice parameter mismatch) which are high enough to produce plastic relaxation with dislocation generation and slip. This study is aimed at describing the ion‐implantation‐induced damage in single crystal cadmium telluride caused by Er + ions by means of transmission electron microscopy.