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Characterization of interface states at Ni/n‐Si Schottky barriers from I – V characteristics
Author(s) -
Sahay P. P.,
Srivastava R. S.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170251218
Subject(s) - schottky diode , materials science , torr , epitaxy , schottky barrier , condensed matter physics , wafer , density of states , semiconductor , diode , conduction band , optoelectronics , layer (electronics) , electron , nanotechnology , physics , quantum mechanics , thermodynamics
Experiments were performed on Ni/n‐Si(111) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n + Si epitaxial wafer at ˜ 10 −5 torr pressure. The non‐equilibrium occupation functions of the interface states were studied using the Shockley‐Read‐Hall (SRH) theory and considering the charge exchange between metal and interface states. Interface states density was determined from ( I ‐ V ) characteristics using metal‐interfacial layer‐semiconductor (MIS) structure. The density was found to be in the range of 10 12 eV −1 cm −2 with a broad peak in the band gap of Si at about 0.554 eV below the conduction band edge.