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Low‐temperature LPE technique for the performance of visible AlGaAs (SC) lasers
Author(s) -
Díaz P.,
Prutskij T. A.,
López F.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170251211
Subject(s) - lasing threshold , laser , diode , materials science , current density , optoelectronics , wavelength , optics , laser diode , current (fluid) , physics , quantum mechanics , thermodynamics
The possibilities of the low‐temperature (LT)‐LPE technique in the performance of visible AlGaAs laser diodes are studied. Low current density visible lasers λ ˜ 746 nm has been fabricated and characterized. The laser diode structures are of the separate confinement type (SC) to obtain low threshold current ( J th = 190 A/cm 2 at λ = 848 nm for a cavity length L = 1.15 mm). The threshold current density J th versus lasing wavelength λ characteristic, as well as the dependences of the threshold current density J th and the reciprocal of differential quantum efficiency 1/η d with the cavity length L are reported. The expected linear behaviour of the J th and 1/η d with the cavity length characteristics appears to break down for the shortest cavity length which is larger for shorter lasing wavelengths.