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Growth of KDP crystals by splicing “parallel”‐seed in aqueous solution and its mechanism
Author(s) -
Feng Pan,
Jinkui Liang,
Genbo Su,
Qinglan Zhao,
Youping He,
Yisen Huang
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170251205
Subject(s) - monocrystalline silicon , crystallography , etching (microfabrication) , crystal growth , boundary (topology) , rna splicing , dislocation , aqueous solution , chemistry , crystal (programming language) , materials science , mathematics , composite material , silicon , optoelectronics , biochemistry , mathematical analysis , rna , layer (electronics) , gene , computer science , programming language
Growth of the habit of a single seed and the special growth of splicing “parallel” seeds were investigated and compared with. Chemical etching and X‐ray topography were used to characterize spliced KDP crystals. The kinetic data in different growth stages were measured. It is concluded that secondary capping is the most important stage in the splicing parallel‐seed growth, and that the subgrain boundaries emitted from the secondary cap are parallel to or overlap with the splicing boundary and stretch to the prismatic surface about 45° to the z ‐axis, and that above the twin‐crystal regions with subgrain boundaries the real monocrystalline region appears. The growth kinetics of the subgrain boundary approximately corresponds to the growth mechanism of single‐spiral dislocation.