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Diode n‐p CuInSe 2 Structures Fabricated by Oxygen Implantation
Author(s) -
Medvedkin G. A.,
Yu. Rud V.,
Yakushev M. V.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170251113
Subject(s) - photoelectric effect , diode , ion implantation , materials science , oxygen , optoelectronics , ion , analytical chemistry (journal) , chemistry , organic chemistry , chromatography
Abstract The influence of oxygen implantation on the electrical features of n‐type CuInSe 2 single crystals has been studied. n‐p type conversion in the implanted region has been observed. Photoelectric characteristics of the fabricated structures have been examined. It has been shown that ion implantation allows to fabricate CuInSe 2 photoconverters with the absolute current sensitivity up to S i = 33 mA/W at 300 K.