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Studies on the lattice match and strain in the epitaxial growth of III – V alloys on inas and GaSb substrates
Author(s) -
Gnanasundaram D.,
Mani V. N.,
Dhanasekaran R.,
Ramasamy P.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170251004
Subject(s) - epitaxy , lattice (music) , materials science , alloy , condensed matter physics , crystallography , strain (injury) , nanotechnology , chemistry , metallurgy , physics , medicine , layer (electronics) , acoustics
The compositional conditions to deposit the epitaxial films of III – V materials lattice matched to InAs and GaSb substrates have been investigated and the results are presented in the form of charts. The validity of our theoretical predictions has been tested by comparing with the available experimental results. Strain in the Ga x In 1 − x As y Sb 1 − y quaternary alloy has been visualised as three‐dimensional perspective plots.