On steady‐state modelling of the high‐pressure liquid encapsulated czochralski (HPLEC) crystal growth of InP (Conduction Model) | Zendy

Böttcher K. | Zendy; Krüger A. | Zendy; Schleusener B. | Zendy

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On steady‐state modelling of the high‐pressure liquid encapsulated czochralski (HPLEC) crystal growth of InP (Conduction Model)

Author(s) -

Böttcher K.,

Krüger A.,

Schleusener B.

Publication year - 1990

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170250906

Subject(s) - thermal conduction , steady state (chemistry) , materials science , crystal growth , constant (computer programming) , growth model , thermal , thermodynamics , czochralski method , transparency (behavior) , time constant , chemistry , mathematics , composite material , physics , electrical engineering , engineering , computer science , computer security , mathematical economics , programming language

The steady‐state temperature distribution of the growth system is calculated at various stages of the growth process. The results indicate a serious influence of the thermal transparency of the B 2 O 3 . The heater power which has to be adjusted in order to achieve a constant diameter growth is calculated as an inverse problem.

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