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On steady‐state modelling of the high‐pressure liquid encapsulated czochralski (HPLEC) crystal growth of InP (Conduction Model)
Author(s) -
Böttcher K.,
Krüger A.,
Schleusener B.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250906
Subject(s) - thermal conduction , steady state (chemistry) , materials science , crystal growth , constant (computer programming) , growth model , thermal , thermodynamics , czochralski method , transparency (behavior) , time constant , chemistry , mathematics , composite material , physics , electrical engineering , engineering , computer science , computer security , mathematical economics , programming language
The steady‐state temperature distribution of the growth system is calculated at various stages of the growth process. The results indicate a serious influence of the thermal transparency of the B 2 O 3 . The heater power which has to be adjusted in order to achieve a constant diameter growth is calculated as an inverse problem.