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Growth and characteristics of HgGaInS 4 single crystals
Author(s) -
Moldovyan N. A.,
Chebotaru V. Z.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250904
Subject(s) - photoelectric effect , radiative transfer , enhanced data rates for gsm evolution , absorption (acoustics) , absorption edge , band gap , recombination , iodine , binding energy , materials science , chemistry , molecular physics , atomic physics , crystallography , analytical chemistry (journal) , optics , physics , optoelectronics , telecommunications , biochemistry , computer science , metallurgy , gene , chromatography
Single crystals of the HgGaInS 4 layered compound were grown by the iodine transport technique. Results of their optical, photoelectric, and radiative properties' study are presented. The band gap and the binding energy of holes on the sensitizing centres were determined to be E g = 2.41 eV and E a = 0.2 eV, respectively. A presence of quasi‐continuously distributed states was stated which are responsible for the exponential segment of the absorption edge and which take part in the radiative recombination.