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Study of ZnSe and CdSe thin film epitaxy on germanium and silicon substrates
Author(s) -
Bruk L. I.,
Kabir S. M.,
Korotkov V. A.,
Leondar V. V.,
Simashkevich A. V.,
Tsaran V. M.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250809
Subject(s) - monocrystalline silicon , substrate (aquarium) , materials science , cadmium selenide , epitaxy , thin film , silicon , zinc selenide , germanium , condensation , crystallography , optoelectronics , chemistry , nanotechnology , layer (electronics) , quantum dot , thermodynamics , geology , oceanography , physics
The parameters of vaporization, mass‐transfer, condensation, and epitaxial growth by hot wall technique (HWT) of ZnSe and CdSe thin films on monocrystalline Ge and Si substrates are studied (Bubnov et al.). It is shown, that the layers structure is improved as the mass transfer mechanism approaches to gasodinamical vapor flow. The influence of condensation temperature of the layers on their crystallographic structure is shown. The increase of the temperature gradient from the source towards the substrate as well as the substrate temperature conditions for growing layers of hexagonal modification. The decrease of the temperature gradient leads to cubic modification. The electron diffraction study revealed the stepwise character of the zinc selenide and cadmium selenide film growth. The knowledge of the parameters of ZnSe and CdSe thin films on monocrystalline Ge and Si by hot wall technique at relatively low substrate temperatures allows to obtain layers, suitable for formation of solid state devices for registration and reflection of optical information.