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Optical absorption and photoelectric properties of Ga 2 In 4 S 9 single crystals
Author(s) -
Moldovyan N. A.,
Chebotaru V. Z.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250720
Subject(s) - photoelectric effect , photoconductivity , absorption edge , absorption (acoustics) , valence band , band gap , valence (chemistry) , materials science , enhanced data rates for gsm evolution , photon energy , chemistry , molecular physics , optics , photon , optoelectronics , physics , telecommunications , organic chemistry , computer science
Presented in this paper are the results obtained from the investigation of absorption edge and photoconductivity of layered Ga 2 In 4 S 9 single crystals as well as from the investigation of the photovoltaic effect in Pt—Ga 2 In 4 S 9 surface‐barrier structures. We determined the magnitude of the direct band gap to be E g = 2.72 eV and the position of the sensitizing centres to be ≈0.15 eV above the valence band top. In the regions of the photon energies smaller than E g the absorption band edge is described by an exponential dependence with a temperature independent slope.