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The influence of etching conditions on surface contamination during silicon etching in CF 4 plasma
Author(s) -
Glück B.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250714
Subject(s) - wafer , etching (microfabrication) , silicon , reactive ion etching , materials science , plasma etching , aluminium , dry etching , contamination , analytical chemistry (journal) , oxygen , composite material , optoelectronics , chemistry , layer (electronics) , environmental chemistry , ecology , organic chemistry , biology
The dependence of blanked‐etched silicon surface quality on the etch parameters and mask material was studied. First it was tried to find such etch conditions, where the silicon surface keeps clean. It was found that etching in RIE‐mode yields better surfaces than in PE‐mode. There was no noticeable influence by variation the oxygen content in the CF 4 /O 2 ‐etch gas mixture and the total gas flow. If the generator current was raised, the edge zone of the wafer, where the surface is contaminated, becomes greater. Second it is shown that the presence of aluminium as mask material makes worse the surface quality. This effect is stronger during etching in the RIE‐mode than in the PE‐mode.