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On chemical kinetics of silicon deposition from silane (I). The first order chemical reaction
Author(s) -
Kühne H.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250710
Subject(s) - silane , homogeneity (statistics) , isothermal process , silicon , growth rate , homogeneous , layer (electronics) , deposition (geology) , chemistry , reaction rate , chemical engineering , chemical reaction , chemical vapor deposition , materials science , thermodynamics , composite material , nanotechnology , catalysis , organic chemistry , geometry , mathematics , physics , paleontology , statistics , sediment , biology , engineering
Theoretical expressions for silicon layer deposition in consequence of silane decomposition within an open isothermal reaction tube has been derived for the case of homogeneous as well as heterogeneous gas reaction. Layer growth distribution along reaction tube axis has been taken into consideration as well as average layer growth rate related to silane consumption during its passage through the tube on the one hand and to growth rate distribution along the tube on the other. Comparing the theoretical results with experimentally based data homogeneous rather than heterogeneous reaction mode might be preferred. In consequence, however, layer growth rate should be linearly effected by the ratio of reactor gas volume to total substrate surface area. In a practical sense average growth rate, and so axial growth homogeneity, should be expected the higher the lower silane consumption efficiency would be adjusted.