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Effect of temperature on dielectric properties of SnO 2 /Sb 2 O 3 mixed thin films
Author(s) -
Kumar J. Siva,
Rao K. V. Styatanarayana,
Rao U. V. Subba
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250620
Subject(s) - thin film , dielectric , materials science , analytical chemistry (journal) , evaporation , torr , activation energy , vacuum evaporation , mineralogy , chemistry , nanotechnology , optoelectronics , physics , chromatography , thermodynamics
Thin films of various thicknesses in the MIM structure have been prepared from the powder of SnO 2 /Sb 2 O 3 mixed sample by the thermal evaporation technique in a vacuum of 10 −5 Torr. Dielectric properties of SnO 2 /Sb 2 O 3 mixed thin films have been studied with temperature starting from LNT to RT and above RT and frequency ranging from 100 Hz to 16 kHz. The activation energy for the migration of charge carriers in SnO 2 /Sb 2 O 3 mixed thin films has been calculated and it is found to be 0.23 eV. The results thus obtained on dielectric properties of SnO 2 /Sb 2 O 3 mixed thin films are presented and discussed.