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X‐ray investigation on GaAlAs/GaAs epilayers bending at temperatures 77–750 K
Author(s) -
Leszczynski M.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250618
Subject(s) - lattice constant , thermal expansion , lattice (music) , materials science , bending , thermal , x ray , crystal (programming language) , condensed matter physics , crystallography , chemistry , optics , thermodynamics , composite material , physics , diffraction , computer science , acoustics , programming language
The Bond method of precise lattice constants measurements and double crystal (+, −) (004) reflections were applied to measure lattice constants, lattice mismatch, thickness of the layers and samples bending in temperature 77–750 K. The results enabled to calculate the ratio of GaAs and Ga 1− x Al x As elastic constants as well as thermal expansion coefficients.