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Calculations of homogeneous region in Ga 1− x Al x As and GaAs 1− x P x ternary solid solutions
Author(s) -
Ivashchenko A. I.,
Kopanskaya F. Ya.,
Tarchenko V. P.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250609
Subject(s) - ternary operation , liquidus , solid solution , solidus , homogeneous , thermodynamics , chemistry , formalism (music) , crystal (programming language) , homogeneity (statistics) , lattice energy , crystallography , binary number , crystal structure , physics , phase (matter) , art , musical , statistics , mathematics , arithmetic , organic chemistry , alloy , computer science , visual arts , programming language
Ternary solid solutions of A III B V compounds are considered as pseudobinary A(x) III B(x) v compounds, where the behaviour of A(x) III and B(x) v pseudoatoms is quite similar to A III and B v atoms in a binary A III B v crystal. Weak dependence of point defect contribution into Gibb's energy of A III B v crystal on its defect nature, random character of ternary solid solutions of A III B v compounds allow to use already for binary compounds developed formalism in the determination of component thermodynamic potentials of solid solution. Basing on literature data for the equilibrium solidus of AlAs the approximation for the temperature dependence of thermodynamic potential of an AB quasimolecule in A III B v crystal is revised. This result together with the well‐known parameters for the equilibrium liquidus in Ga–P, Ga–As, and Al–As systems were used for calculations of the nonstoichiometric factor at the boundary of a homogeneous region in Ga 1− x Al x As and GaAs 1− x P x ternary solid solutions. The results are compared with the known literature data.