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Growth and microstructural studies of some indium chalcopyrite semiconductors
Author(s) -
Balakrishnan K.,
Vengatesan B.,
Kanniah N.,
Ramasamy P.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250605
Subject(s) - chalcopyrite , scanning electron microscope , semiconductor , ternary operation , indium , materials science , optical microscope , microstructure , semiconductor materials , electron microscope , compound semiconductor , crystallography , mineralogy , analytical chemistry (journal) , optoelectronics , metallurgy , nanotechnology , chemistry , optics , copper , composite material , epitaxy , physics , computer science , programming language , layer (electronics) , chromatography
Abstract Single crystals of ternary chalcopyrite semiconductors such as CuInS 2 , CuInSe 2 , CuInTe 2 , and CuInSSe, a pseudo‐ternary semiconductor, have been grown by Chemical Vapour Transport (CVT) technique using iodine as the transporting agent. Microstructural analysis was carried out with the help of Scanning Electron Microscope (SEM) and optical microscope for the grown single crystals.