Lattice parameter variation in inp related to the dopant element and doping level | Zendy

Knauer A. | Zendy; Kräusslich J. | Zendy; Kittner R. | Zendy; Staske R. | Zendy; Bärwolff A. | Zendy

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Lattice parameter variation in inp related to the dopant element and doping level

Author(s) -

Knauer A.,

Kräusslich J.,

Kittner R.,

Staske R.,

Bärwolff A.

Publication year - 1990

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170250417

Subject(s) - dopant , lattice constant , doping , materials science , wafer , lattice (music) , crystal structure , condensed matter physics , crystallography , optoelectronics , chemistry , optics , physics , diffraction , acoustics

The variation of the lattice constant was determined across (001) InP wafers from 〈111〉 grown LEC INP: S and InP: Sn + Ga + As monocrystals. The variation correlates to the free carrier distribution. The enrichment of dopants results in lattice spacing in the crystal core (especially for InP: Sn + Ga + As), which occupy a larger region as dopant enrichment do.

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