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Lattice parameter variation in inp related to the dopant element and doping level
Author(s) -
Knauer A.,
Kräusslich J.,
Kittner R.,
Staske R.,
Bärwolff A.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250417
Subject(s) - dopant , lattice constant , doping , materials science , wafer , lattice (music) , crystal structure , condensed matter physics , crystallography , optoelectronics , chemistry , optics , physics , diffraction , acoustics
The variation of the lattice constant was determined across (001) InP wafers from 〈111〉 grown LEC INP: S and InP: Sn + Ga + As monocrystals. The variation correlates to the free carrier distribution. The enrichment of dopants results in lattice spacing in the crystal core (especially for InP: Sn + Ga + As), which occupy a larger region as dopant enrichment do.