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Cr doping influence in ZnS single crystals on the complex disordered polytypical structure
Author(s) -
Gosk J.,
Kozielski M. J.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250413
Subject(s) - dopant , crystallography , doping , stacking , materials science , crystal structure , single crystal , chemistry , mineralogy , optoelectronics , organic chemistry
The results of X‐ray investigation of real structures of ZnS:Cr single crystals are presented. Doped ZnS single crystals were grown from the melt by Bridgman's high pressure method. Cr dopant converts the structure of ZnS crystals from 3C with individual stacking faults (for pure ZnS) to the complex polytypical structures disordered along one dimension and including specific orderings of cp layers that form polytype cells LH ( L = 2 l, l = 2, 3, 4 and 5). The structures are characterised by Farkas‐Jahnkes statistical parameters π(m, p) and by parameters P LH of the polytype unit cell formation probability (Kozielski, Tomaszewicz 1986; Palosz, Przedmojski).