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Melting and crystallization of silicon layers on insulator with millisecond lamp heating
Author(s) -
Aleksandrov L. N.,
Zinovyev V. A.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250308
Subject(s) - silicon , millisecond , materials science , crystallization , silicon on insulator , substrate (aquarium) , thermal conduction , layer (electronics) , zone melting , optoelectronics , composite material , chemical engineering , oceanography , physics , astronomy , engineering , geology
Melting and crystallization of silicon layers in a SOI structure (SiSiO 2 Si) at millisecond lamp heating have been studied by model calculations using the solution of conduction equation. Pulse heating conditions that do not lead to silicon substrate melting under SiO 2 have been determined. For pulses of 1 and 4.4 ms duration the silicon melt lifetime on the SiO 2 surface has been estimated. The lengths of the crystal oriented growth from windows in the SiO 2 layer that open the single‐crystalline silicon substrate have been measured (25 and 64 μm).