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Effective kinetic coefficients for some binary metallic alloys within the small and finite supercooling region
Author(s) -
Baikov Yu. A.,
Chistyakov Yu. D.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250215
Subject(s) - supercooling , thermodynamics , binary number , kinetic energy , materials science , crystallization , metal , phase (matter) , crystallography , chemistry , metallurgy , physics , organic chemistry , arithmetic , mathematics , quantum mechanics
The normal crystallization kineties concerning the base of In, Rb, Ga some binary metallic melts either within the small supercoolings (Δ T ≦ 1 K) or finite ones (Δ T ≦ 20 ÷ 60 K) has been considered. When crystallizing the binary alloys: In + 2.3 at.% Pb; Rb + 10 at.% K; Ga + 2 at.% Sn; Ga + (2; 4; 8) at.% In; Ga + (0.5; 3.5) at.% Zn; Ga + (5; 8; 10) at.% Zn very dilute binary solid solutions are supposed to be formed. The solid solutions have the B‐component distribution coefficients which are either much less or less compared with unit, i.e. k B ≦ 1, k B < 1 in all the layers of diphase transition region separating the melt from the crystalline phase. By virtue of fluctuation theory of normal crystal growth within the small and finite supercoolings' region for the above‐mentioned binary metallic melt some effective kinetic coefficients have been calculated. A good agreement between theoretical effective kinetic coefficients and available experimental ones in the case of given binary systems has been established.