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Doping of PbTe and Pb 1− x Sn x Te with gallium and indium
Author(s) -
Duguzhev Sh. M.,
Makhin A. V.,
Moshnikov V. A.,
Shelykh A. I.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250208
Subject(s) - gallium , indium , doping , materials science , solid solution , electrical resistivity and conductivity , analytical chemistry (journal) , crystallography , chemistry , metallurgy , physics , optoelectronics , chromatography , quantum mechanics
Precipitations in Indium and Gallium‐doped PbTe, SnTe and Pb 1− x Sn x Te are investigated. The compositions of the precipitated phases are PbGa 6 Te 10 SnGa 6 Te 10 and PbIn 6 Te 10 for binary compounds. For Pb 1− x Sn x Te the precipitated phase composition corresponds to the continuous solid solutions Pb 1− z Sn z Ga 6 Te 10 . Basic properties of the new compounds are determined. Their resistivity being of 5 ÷ 6 orders higher than that for Pb(Sn)Te, the anomalous transfer phenomena, observed in highly Ga(In)‐doped samples can be explained on the basis of the barrier model.