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Electro‐optical properties of InGaAs layers grown by hydride vapour phase epitaxy
Author(s) -
Attolini G.,
Bocchi C.,
Fornari R.,
Pelosi C.,
Oswald J.,
Pastrnak J.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250107
Subject(s) - epitaxy , hydride , materials science , photoluminescence , optoelectronics , alloy , phase (matter) , vapor phase , capacitance , crystal (programming language) , chemistry , nanotechnology , layer (electronics) , composite material , metallurgy , metal , electrode , physics , thermodynamics , organic chemistry , computer science , programming language
Abstract A series of epitaxial layers of the InGaAs alloy were deposited on (001) oriented InP substrates by using hydride VPE technique. The layers were characterized by Double Crystal Diffractometry (DCD), Photoluminescence (PL), Hall effect and Capacitance‐Voltage (C‐V) measurements. The growth parameters and the quality of the grown layers are discussed on the basis of electrical and structural data analysis.