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Ageing effect on dielectric properties of SnO 2 , Sb 2 O 3 , and their mixed thin films
Author(s) -
Kumar J. Siva,
Rao K. V. Satyanarayana,
Rao U. V. Subba
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170241222
Subject(s) - dielectric , dissipation factor , capacitor , materials science , thin film , capacitance , dielectric loss , ageing , evaporation , torr , porosity , analytical chemistry (journal) , mixed oxide , composite material , oxide , metallurgy , chemistry , optoelectronics , nanotechnology , electrode , electrical engineering , thermodynamics , voltage , physics , chromatography , biology , genetics , engineering
Thin films of various thicknesses in the form of MIM structures have been prepared from the powders of high purity of SnO 2 , Sb 2 O 3 , and their mixed powders separately by the thermal evaporation technique in a vacuum of 10 −5 Torr. The dielectric properties of these oxide thin films have been studied with ageing time and also with frequency at room temperature. The results obtained have shown that the capacitance and loss tangent of the structures initially fall off rapidly and thereafter they attain a constant value even after ageing the capacitors for about 20 days. The rapid fall of capacitance and loss tangent may be due to the rapid decrease in the density of defects due to ageing time. The results thus obtained on SnO 2 , Sb 2 O 3 , and their mixed thin film capacitors are presented and discussed.