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A difference between initial growth stages of the AlGaAs/GaAs and GaAs/AlGaAs heterostructures produced by contact replacement of solutions
Author(s) -
Bolkhovityanov Yu. B.,
Logvinskii L. M.,
Rudaya N. S.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170241106
Subject(s) - heterojunction , epitaxy , ternary operation , diffusion , dissolution , materials science , chemistry , optoelectronics , condensed matter physics , nanotechnology , thermodynamics , physics , layer (electronics) , computer science , programming language
The method of liquid epitaxial growth of GaAs/AlGaAs/GaAs heterostructures when the change of solutions occurs due to pushing off one melt by another is discussed. It has been shown theoretically and experimentally that the initial stages of film growth after the change of the binary GaAs melt on the ternary AlGaAs melt differ from that when the GaAs solution pushes off the AlGaAs liquid. The difference is caused by the inequality of the diffusion coefficients of As and Al in a multicomponent AlGaAs liquid ( D Al > D As ). As a result, the growth of an AlGaAs film begins immediately in the case when the AlGaAs solution pushes off the GaAs liquid but in the opposite case the dissolution of an underlying AlGaAs solid is unavoidable and depends little on degree of a saturation of the GaAs washing solution. These peculiarities must be taken into account in discussions of abruptness and other properties of LPE‐grown AlGaAs/GaAs and GaAs/AlGaAs heterojunctions.