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Undoped semi‐insulating GaAs crystals grown by a modified low pressure LEC method
Author(s) -
Mo P. G.,
Fan X. Q.,
Zhou Y. D.,
Wu J.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170241104
Subject(s) - annealing (glass) , materials science , in situ , evaporation , reproducibility , crystal growth , analytical chemistry (journal) , thermal , chemical engineering , crystallography , chemistry , composite material , thermodynamics , chromatography , physics , organic chemistry , engineering
A modified low pressure in‐situ synthesis LEC method of growing undoped SI (semi‐insulating) GaAs crystals has been established. The key points for controlling melt composition and As evaporation during synthesis and growth have been described. Using this novel approach, crystals are able to be grown from the nominal melt composition in the range of 0.491–0.499 As fraction with high reproducibility. Some characteristics of the undoped SI crystals grown by the present work including electrical properties, dislocation density, carbon and EL2 concentrations and thermal annealing effects have been studied.