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Characteristics of GaAsAlGaAs (SCH) lasers grown by low‐temperature LPE technique
Author(s) -
Diaz P.,
Prutskij T. A.,
Sanchez M.,
Larionov V. R.,
Khvostikov V. P.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240914
Subject(s) - laser , metalorganic vapour phase epitaxy , heterojunction , materials science , optoelectronics , differential gain , current density , quantum well , layer (electronics) , semiconductor laser theory , optics , epitaxy , semiconductor , nanotechnology , physics , quantum mechanics
In this paper we report the performance and study of GaAsAlGaAs (SCH) laser. The structures were grown by a new variant of the LPE‐technique with temperatures regimes lower than 600 °C. The Low Temperature LPE‐technique, recently propoused by A NDREEV and coworkers at the IOFFE‐Physico‐Technical Institute exhibit growth rates of the growing layers as low as that corresponding to MBE or MOCVD techniques. In this way, it is possible to obtain and control layer thicknesses in the structure of the order of tens to hundreds of Ångströms. Laser heterostructures with active layer thickness of 30 nm, were performed and the lowest threshold current density of 437 A/cm 2 for a cavity length of 1.33 mm were obtained. A typical growth process is described and a SEM structure microphotograph is shown. The dependences of the threshold current density J th and the differential quantum efficiency η d with the cavity length L are reported. From these data, other laser parameters are evaluated such as internal optical losses α 1 , internal quantum efficiency η i and the dependence of the maximum of the gain factor against the nominal current density J nom at threshold. This dependence was compared with the theoretical predictions and a good agreement was found.