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Wetting of InP by indium‐ and indium‐tin melts
Author(s) -
Mareck DC U.,
Gottschalch V.,
Butter E.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240910
Subject(s) - wetting , indium , sessile drop technique , materials science , substrate (aquarium) , contact angle , tin , anisotropy , drop (telecommunication) , composite material , metallurgy , optics , geology , oceanography , telecommunications , computer science , physics
Orientation dependent wetting of InP substrates by In‐ and In x Sn 1− x melts saturated with InP was studied using the sessile drop method. The contact angle was found to depend on the substrate orientation as follows:\documentclass{article}\pagestyle{empty}\begin{document}$$ \vartheta _{(100)} <\vartheta _{(111){\rm A}} <\vartheta _{(111){\rm B}} <\vartheta _{(110)}. $$\end{document}It is shown that a tin admixture to the indium melt improves the wetting behaviour. Additional to the dependence on substrate orientation it was found an anisotropic wetting on all investigated faces.