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Effects of melt composition on structural and electrical characteristics of LEC Si‐doped gallium arsenide
Author(s) -
Fornari R.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240808
Subject(s) - gallium arsenide , doping , crystallographic defect , materials science , dislocation , gallium , stoichiometry , arsenide , silicon , condensed matter physics , crystallography , chemistry , optoelectronics , composite material , metallurgy , physics
The aim of this paper is that of briefly reviewing the experimental observations carried out on Si‐doped gallium arsenide grown from off‐stoichiometry melts (either Ga‐ or Asrich) in the author's laboratory. It will be shown that the melt composition strongly affect the electrical (electron mobility, density of deep levels) and structural (dislocation density, precipitates) properties of the bulk crystals which proves the existence of a link between point defects and physical and crystallographic characteristics. The experimental results will be discussed considering recent literature reports on point defects in bulk GaAs.