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Impurity distribution within the diffusion layer in the cluster crystallization model
Author(s) -
Zharikov E. V.,
Zavartsev Yu. D.,
Laptev V. V.,
Samoilova S. A.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240804
Subject(s) - crystallization , impurity , supercooling , cluster (spacecraft) , diffusion , crystal (programming language) , crystallography , layer (electronics) , materials science , chemical physics , allowance (engineering) , distribution (mathematics) , crystal growth , chemistry , thermodynamics , condensed matter physics , nanotechnology , physics , mathematics , mechanical engineering , mathematical analysis , organic chemistry , computer science , engineering , programming language
The impurity distribution in front of the surface of the growing crystal by Czochralski method is considered at the assumption that the crystallization begins in the melt within the diffusion layer by the formation of clusters, i.e. it has an extented nature. The moving force of the crystallization is the supercooling of the melt. The principle distinction from the classical BPS theory is that the concentration profile has no break near the meltcrystal interface and is defined by the impurity concentrations both in the liquid and cluster phases with allowance for their specific volumes.