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VPE growth of InGaAS/InP structures using the hydride system
Author(s) -
Diegner B.,
Eberle T.,
Jacobs K.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240704
Subject(s) - hydride , epitaxy , partial pressure , materials science , chemistry , analytical chemistry (journal) , optoelectronics , nanotechnology , metallurgy , organic chemistry , layer (electronics) , oxygen , metal
Some results on the VPE growth of InGaAs/InP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass‐HCl on epitaxial growth of InGaAs is discussed. The GaCl partial pressure was found to be the deciding growth parameter.